IGCT (Reverse Conducting)
Purpose
Ideal IGCT with ideal anti-parallel diode
Library
Electrical / Power Semiconductors
Description
This model of an Integrated Gate Commutated Thyristor has an integrated anti-parallel diode. The diode is usually included in power IGCT packages.
Parameters
- Initial conductivity
- Initial conduction state of the device. The device is initially blocking if the parameter evaluates to zero, otherwise it is conducting. This parameter may either be a scalar or a vector corresponding to the implicit width of the component. The default value is 0.
- Thermal description
- Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapters Thermal Modeling and Losses of Semiconductor Switch with Diode.
- Initial temperature
- Temperature of all thermal capacitors in the equivalent Cauer network at simulation start. This parameter may either be a scalar or a vector corresponding to the implicit width of the component.
Probe Signals
- Device voltage
- The voltage measured between anode and cathode. The device voltage can never be negative.
- Device current
- The current through the device. The current is positive if it flows through the IGCT from anode to cathode and negative if it flows through the diode from cathode to anode.
- Device gate signal
- The gate input signal of the device.
- Device conductivity
- Conduction state of the internal switch. The signal outputs 0 when the device is blocking, and 1 when it is conducting.
- Device junction temperature
- Temperature of the first thermal capacitor in the equivalent Cauer network.
- Device conduction loss
- Continuous thermal conduction losses in watts (W). Only defined if the component is placed on a heat sink.
- Device switching loss
- Instantaneous thermal switching losses in joules (J). Only defined if the component is placed on a heat sink.