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IGBT

Purpose

Ideal IGBT with or without forward voltage and on-resistance.

Library

Electrical / Power Semiconductors

Description

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The Insulated Gate Bipolar Transistor is a semiconductor switch that is controlled via the external gate. It conducts a current from collector to emitter only if the gate signal is not zero.

Parameters

The following parameters may either be scalars or vectors corresponding to the implicit width of the component:

Forward voltage
Additional dc voltage Vf    in volts (V) between collector and emitter when the IGBT is conducting. The default is 0.
On-resistance
The resistance Ron   of the conducting device, in ohms (_O_  ). The default is 0.
Initial conductivity
Initial conduction state of the IGBT. The IGBT is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
Thermal description
Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapter Thermal Modeling. If no thermal description is given the losses are calculated based on the voltage drop von = Vf + Ron ⋅i  .
Initial temperature
Temperature of all thermal capacitors in the equivalent Cauer network at simulation start.

Probe Signals

IGBT voltage
The voltage measured between collector and emitter.
IGBT current
The current through the IGBT flowing from collector to emitter.
IGBT conductivity
Conduction state of the internal switch. The signal outputs 0 when the IGBT is blocking, and 1 when it is conducting.
IGBT junction temperature
Temperature of the first thermal capacitor in the equivalent Cauer network.
IGBT conduction loss
Continuous thermal conduction losses in watt (W). Only defined if the component is placed on a heat sink.
IGBT switching loss
Instantaneous thermal switching losses in joule (J). Only defined if the component is placed on a heat sink.