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GTO with Diode

Purpose

Ideal GTO with ideal anti-parallel diode.

Library

Switches

Description

pict

This model of a Gate Turn Off Thyristor has an integrated anti-parallel diode. The diode is usually included in power GTO packages.

Parameters and Dialog Box

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The following parameters may either be scalars or vectors corresponding to the implicit width of the component:
Initial conductivity
Initial conduction state of the GTO. The GTO is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
Thermal description
Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapters Thermal Modeling and Losses of Semiconductor Switch with Diode for more information.
Initial temperature
Temperature of all thermal capacitors in the equivalent Cauer network at simulation start.

Probe Signals

Device voltage
The voltage measured between anode and cathode.
Device current
The current through the device flowing from anode to cathode.
Device conductivity
Conduction state of the internal switch. The signal outputs 0 when the device is blocking, and 1 when it is conducting.
Device junction temperature
Temperature of the first thermal capacitor in the equivalent Cauer network.
Device conduction loss
Continuous thermal conduction losses in watt (W). Only defined if the component is placed on a heat sink.
Device switching loss
Instantaneous thermal switching losses in joule (J). Only defined if the component is placed on a heat sink.