GTO with Diode
Purpose
Ideal GTO with ideal anti-parallel diode.
Library
Switches
Description
This model of a Gate Turn Off Thyristor has an integrated anti-parallel diode.
The diode is usually included in power GTO packages.
Parameters and Dialog Box
The following parameters may either be scalars or vectors corresponding to the
implicit width of the component:
-
Initial conductivity
- Initial conduction state of the GTO. The GTO is initially
blocking if the parameter evaluates to zero, otherwise it is conducting.
-
Thermal description
- Switching losses, conduction losses and thermal equivalent
circuit of the component. For more information see chapter Thermal Modeling.
-
Initial temperature
- Temperature of all thermal capacitors in the equivalent
Cauer network at simulation start.
Probe Signals
-
Device voltage
- The voltage measured between anode and cathode.
-
Device current
- The current through the device flowing from anode to cathode.
-
Device conductivity
- Conduction state of the internal switch. The signal outputs
0 when the device is blocking, and 1 when it is conducting.
-
Device junction temperature
- Temperature of the first thermal capacitor in the
equivalent Cauer network.
-
Device conduction loss
- Continuous thermal conduction losses in watt (W). Only
defined if the component is placed on a heat sink.
-
Device switching loss
- Instantaneous thermal switching losses in joule (J). Only
defined if the component is placed on a heat sink.