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GTO (Reverse Conducting)

Purpose

Ideal GTO with ideal anti-parallel diode

Library

Electrical / Power Semiconductors

Description

pict

This model of a Gate Turn Off Thyristor has an integrated anti-parallel diode. The diode is usually included in power GTO packages.

Parameters

The following parameters may either be scalars or vectors corresponding to the implicit width of the component:

Initial conductivity
Initial conduction state of the GTO. The GTO is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
Thermal description
Switching losses, conduction losses and thermal equivalent circuit of the component. For more information see chapters Thermal Modeling and Losses of Semiconductor Switch with Diode for more information.
Initial temperature
Temperature of all thermal capacitors in the equivalent Cauer network at simulation start.

Probe Signals

Device voltage
The voltage measured between anode and cathode.
Device current
The current through the device flowing from anode to cathode.
Device gate signal
The gate input signal of the device.
Device conductivity
Conduction state of the internal switch. The signal outputs 0 when the device is blocking, and 1 when it is conducting.
Device junction temperature
Temperature of the first thermal capacitor in the equivalent Cauer network.
Device conduction loss
Continuous thermal conduction losses in watts (W). Only defined if the component is placed on a heat sink.
Device switching loss
Instantaneous thermal switching losses in joules (J). Only defined if the component is placed on a heat sink.