GTO
Purpose
Ideal GTO with optional forward voltage and on-resistance
Library
Electrical / Power Semiconductors
Description
The Gate Turn Off Thyristor can also be switched off via the gate. Like a normal thyristor it closes when the voltage between anode and cathode is positive and a positive gate signal is applied. It opens when the current becomes negative or the gate signal becomes negative.
Parameters
The following parameters may either be scalars or vectors corresponding to the implicit width of the component:
- Forward voltage
- Additional dc voltage
in volts (V) between anode and cathode when the GTO is conducting. The default is 0.
- On-resistance
- The resistance
of the conducting device, in ohms (
). The default is 0.
- Initial conductivity
- Initial conduction state of the GTO. The GTO is initially blocking if the parameter evaluates to zero, otherwise it is conducting.
- Thermal description
- Switching losses, conduction losses and thermal equivalent
circuit of the component. For more information see chapter Thermal Modeling.
If no thermal description is given the losses are calculated based on the voltage
drop
.
- Initial temperature
- Temperature of all thermal capacitors in the equivalent Cauer network at simulation start.
Probe Signals
- GTO voltage
- The voltage measured between anode and cathode.
- GTO current
- The current through the GTO flowing from anode to cathode.
- GTO gate signal
- The gate input signal of the GTO.
- GTO conductivity
- Conduction state of the internal switch. The signal outputs 0 when the GTO is blocking, and 1 when it is conducting.
- GTO junction temperature
- Temperature of the first thermal capacitor in the equivalent Cauer network.
- GTO conduction loss
- Continuous thermal conduction losses in watts (W). Only defined if the component is placed on a heat sink.
- GTO switching loss
- Instantaneous thermal switching losses in joules (J). Only defined if the component is placed on a heat sink.