IGBT
Purpose
Ideal IGBT with optional forward voltage and on-resistance
Library
Electrical / Power Semiconductors
Description
The Insulated Gate Bipolar Transistor is a semiconductor switch that is
controlled via the external gate. It conducts a current from collector to emitter only
if the gate signal is not zero.
Parameters
The following parameters may either be scalars or vectors corresponding to the
implicit width of the component:
-
Forward voltage
- Additional dc voltage
in volts (V) between collector and
emitter when the IGBT is conducting. The default is 0.
-
On-resistance
- The resistance
of the conducting device, in ohms (
). The
default is 0.
-
Initial conductivity
- Initial conduction state of the IGBT. The IGBT is initially
blocking if the parameter evaluates to zero, otherwise it is conducting.
-
Thermal description
- Switching losses, conduction losses and thermal equivalent
circuit of the component. For more information see chapter Thermal Modeling.
If no thermal description is given the losses are calculated based on the voltage
drop
.
-
Initial temperature
- Temperature of all thermal capacitors in the equivalent
Cauer network at simulation start.
Probe Signals
-
IGBT voltage
- The voltage measured between collector and emitter.
-
IGBT current
- The current through the IGBT flowing from collector to emitter.
-
IGBT gate signal
- The gate input signal of the IGBT.
-
IGBT conductivity
- Conduction state of the internal switch. The signal outputs
0 when the IGBT is blocking, and 1 when it is conducting.
-
IGBT junction temperature
- Temperature of the first thermal capacitor in the
equivalent Cauer network.
-
IGBT conduction loss
- Continuous thermal conduction losses in watts (W). Only
defined if the component is placed on a heat sink.
-
IGBT switching loss
- Instantaneous thermal switching losses in joules (J). Only
defined if the component is placed on a heat sink.