MOSFET
Purpose
Ideal MOSFET with optional on-resistance
Library
Electrical / Power Semiconductors
Description
The Metal Oxide Semiconductor Field Effect Transistor is a semiconductor switch
that is controlled via the external gate. It conducts a current from drain to source (or
vice-versa) only if the gate signal is not zero.
Parameters
The following parameters may either be scalars or vectors corresponding to the
implicit width of the component:
-
On-resistance
- The resistance
of the conducting device, in ohms (
). The
default is 0.
-
Initial conductivity
- Initial conduction state of the MOSFET. The MOSFET is
initially blocking if the parameter evaluates to zero, otherwise it is conducting.
-
Thermal description
- Switching losses, conduction losses and thermal equivalent
circuit of the component. For more information see chapter Thermal Modeling.
If no thermal description is given the losses are calculated based on the voltage
drop
.
-
Initial temperature
- Temperature of all thermal capacitors in the equivalent
Cauer network at simulation start.
Probe Signals
-
MOSFET voltage
- The voltage measured between drain and source.
-
MOSFET current
- The current through the MOSFET flowing from drain to
source.
-
MOSFET gate signal
- The gate input signal of the MOSFET.
-
MOSFET conductivity
- Conduction state of the internal switch. The signal
outputs 0 when the MOSFET is blocking, and 1 when it is conducting.
-
MOSFET junction temperature
- Temperature of the first thermal capacitor in
the equivalent Cauer network.
-
MOSFET conduction loss
- Continuous thermal conduction losses in watt (W).
Only defined if the component is placed on a heat sink.
-
MOSET switching loss
- Instantaneous thermal switching losses in joule (J). Only
defined if the component is placed on a heat sink.