IGBT with Diode
Purpose
Ideal IGBT with ideal anti-parallel diode
Library
Electrical / Power Semiconductors
Description
This model of an Insulated Gate Bipolar Transistor has an integrated anti-parallel
diode. The diode is usually required in AC applications such as voltage source
inverters.
Parameters
-
Initial conductivity
- Initial conduction state of the device. The device is initially
blocking if the parameter evaluates to zero, otherwise it is conducting. This
parameter may either be a scalar or a vector corresponding to the implicit width
of the component. The default value is 0.
-
Thermal description
- Switching losses, conduction losses and thermal equivalent
circuit of the component. For more information see chapters Thermal Modeling
and Losses of Semiconductor Switch with Diode.
-
Initial temperature
- Temperature of all thermal capacitors in the equivalent
Cauer network at simulation start. This parameter may either be a scalar or a
vector corresponding to the implicit width of the component.
Probe Signals
-
Device voltage
- The voltage measured
between collector/cathode and emitter/anode. The device voltage can never be
negative.
-
Device current
- The current through the device. The current is positive if it flows
through the IGBT from collector to emitter and negative if it flows through the
diode from anode to cathode.
-
Device gate signal
- The gate input signal of the device.
-
Device conductivity
- Conduction state of the internal switch. The signal outputs
0 when the device is blocking, and 1 when it is conducting.
-
Device junction temperature
- Temperature of the first thermal capacitor in the
equivalent Cauer network.
-
Device conduction loss
- Continuous thermal conduction losses in watt (W). Only
defined if the component is placed on a heat sink.
-
Device switching loss
- Instantaneous thermal switching losses in joule (J). Only
defined if the component is placed on a heat sink.